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Semiconductor memory device having full depletive type logic transistors and partial depletion type memory transistors
Semiconductor memory device having full depletive type logic transistors and partial depletion type memory transistors
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机译:具有全耗尽型逻辑晶体管和部分耗尽型存储晶体管的半导体存储器件
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摘要
A semiconductor device includes a semiconductor substrate, an insulating layer, a silicon layer, full depletion type transistors, and partial depletion type transistors. The insulating layer is formed on the semiconductor substrate. The silicon layer has a first region and a second region. The silicon layer is formed on the insulating layer. The full depletion type transistors are used for a logical circuit, and are formed on the silicon layer at the first region. The partial depletion type transistors are used for a memory cell circuit and are formed on the silicon layer at the second region. The second region of the silicon layer is maintained at a fixed potential.
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