A defect information storing device includes two tables for storing information on defective points of a semiconductor device. The first table stores column addresses and number of defective points existing at this column address for (r×c+c) lines. The second table stores row addresses, number of defective points existing at this row address, and column identifiers indicating the storage place of the column address of the defective point in the first table for (r×c+r) lines.
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