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Semiconductor device with localized charge storage dielectric and method of making same

机译:具有局部电荷存储电介质的半导体器件及其制造方法

摘要

An array of transistors includes a plurality of transistors, a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction. Each transistor includes a source, a drain, a channel and a localized charge storage dielectric. A first transistor of the plurality of transistors and a second transistor of the plurality of transistors share a common source/drain. A first localized charge storage dielectric of the first transistor does not overlap the common source/drain and a second localized charge storage dielectric of the second transistor overlaps the common source/drain.
机译:晶体管阵列包括多个晶体管,在第一方向上延伸的多条字线和在第二方向上延伸的多条位线。每个晶体管包括源极,漏极,沟道和局部电荷存储电介质。多个晶体管中的第一晶体管和多个晶体管中的第二晶体管共享公共的源极/漏极。第一晶体管的第一局部电荷存储电介质不与公共源极/漏极重叠,并且第二晶体管的第二局部电荷存储电介质与公共源极/漏极重叠。

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