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Semiconductor device with localized charge storage dielectric and method of making same
Semiconductor device with localized charge storage dielectric and method of making same
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机译:具有局部电荷存储电介质的半导体器件及其制造方法
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摘要
An array of transistors includes a plurality of transistors, a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction. Each transistor includes a source, a drain, a channel and a localized charge storage dielectric. A first transistor of the plurality of transistors and a second transistor of the plurality of transistors share a common source/drain. A first localized charge storage dielectric of the first transistor does not overlap the common source/drain and a second localized charge storage dielectric of the second transistor overlaps the common source/drain.
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