bipolar transistor with raised base in an integrated circuit bicmos

• 1. BiCMOS结构和在BiCMOS工艺中形成基极的方法 [P] . 中国专利： CN100411190C . 2008.08.13
• 2. 在BiCMOS工艺中形成基极的方法 [P] . 中国专利： CN1667834A . 2005-09-14
• 3. A bipolar transistor with the raised base in an integrated bicmos - circuit [P] . 德国专利： DE60213249T2 . 2007-07-12

  机译： 双极晶体管，其基极抬高于集成的双晶片电路中

• 4. BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTEGRATED BICMOS CIRCUIT [P] . MY134208A . 2007-11-29

  机译： 集成有BiCMOS电路的双极晶体管，带有凸起的基极

• 5. bipolar transistor with raised base in an integrated circuit bicmos [P] . 德国专利： DE60213249D1 . 2006-08-31

  机译： 集成电路bicmos中具有凸起基极的双极晶体管

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• 2. Information-Matter Bipolarity of the Human Organism and ItsFundamental Circuits: From Philosophy toPhysics/Neurosciences-Based Modeling [J] . Florin Gaiseanu 哲学研究：英文版 . 2020,第002期
• 3. METHOD OF PARAMETER STATISTICAL ANALYSIS FOR BIPOLAR INTEGRATED CIRCUIT DESIGN [J] . 郝跃, 过润秋 电子科学学刊：英文版 . 1991,第004期
• 4. Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition [J] . LIN Tao, CAI Dao-min, LI Xian-jie, 半导体光子学与技术（英文版） . 2007,第003期
• 5. Design and Fabrication of Novel Dual-Base Negative-Differential Resistance Heterojunction Bipolar Transistor [J] . 天津大学学报（英文版） . 2005,第005期
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• 9. Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology.ud [O] . Abdul Rahim Alhan Farhanah, Abdul Rahim Ahmad Ismat, Hashim Md. Roslan, 2000
• 10. Physics-Based Heterojunction Bipolar Transistor Model for Integrated Circuit Simulation. [R] . Fellows, J. A. 1993

• 1. 具有穿通基区的双极晶体管光探测器的噪声特性研究 [C] . 常玉春 ,罗海林 ,王玉琦 . 全国化合物半导体.微波器件和光电器件学术会议 . 2000
• 2. 基于BiCMOS模拟乘法器和滤波器的单相有功电能计量集成电路设计技术 [A] . 麦日锋 . 2001