METHOD OF FORMING SILICON OXIDE CONTAINING FILMS

摘要

A method of forming a silicon oxide film, comprising the steps of: - providing a treatment substrate within a reaction chamber; - purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000C, - adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, - purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, - at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and - repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.