A method of forming a ceramic silicon oxide type coating and a method of producing an inorganic base material having this coating, by coating an organohydrogensiloxane/hydrogensiloxane copolymer on the surface of an inorganic base material and converting the coating into a ceramic silicon oxide type coating by heating to high temperatures in an inert gas or an oxygen-containing inert gas (oxygen gas less than 20 volume %). A coating-forming agent comprising an organohydrogensiloxane/hydrogensiloxane copolymer or its solution. A semiconductor device comprising at least a semiconductor layer formed on a silicon oxide type coating on an inorganic substrate.
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