METHOD FOR CLEANING DEVICE FOR FORMING SILICON OXIDE FILM, METHOD FOR FORMING SILICON OXIDE FILM, AND DEVICE FOR FORMING SILICON OXIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning a device for forming a silicon oxide film, a method for forming a silicon oxide film, and a device for forming a silicon oxide film, which are capable of suppressing the occurrence of particles and improving productivity, even in a low temperature such as RT.;SOLUTION: A method for cleaning a device for forming a silicon oxide film includes an oxidation step and a cleaning step. In the oxidation step, oxidation gas is supplied into a reaction chamber to oxidize deposit attached to the inside of the device. In the cleaning step, cleaning gas is supplied into the reaction chamber and the deposit oxidized in the oxidation step is removed to clean the inside of the device for forming a silicon oxide film.;COPYRIGHT: (C)2016,JPO&INPIT