首页>
外国专利>
FIELD EFFECT TRANSISTOR IMPROVABLE JUNCTION ABRUPTNESS AND METHOD FOR MANUFACTURING THE SAME
FIELD EFFECT TRANSISTOR IMPROVABLE JUNCTION ABRUPTNESS AND METHOD FOR MANUFACTURING THE SAME
展开▼
机译:场效应晶体管不能实现的结点简化及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
展开▼