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Optimisation of abrupt emitter-base junction for heavily be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor

机译：重掺杂InP / In / sub 0.53 / Ga / sub 0.47 / As异质结双极晶体管的突然发射极-基极结的优化

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《Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th》|2002年|P.615-618|共4页
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Lefebvre; E.; Zaknoune; M.; Mollot; F.;
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中图分类无线电电子学、电信技术;
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专利

1. Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates [J] . Hong Wang, Geok Ing Ng IEEE Electron Device Letters . 2000,第9期

机译：在GaAs基板上演示无铝变质InP / In / sub 0.53 / Ga / sub 0.47 / As / InP双异质结双极晶体管
2. High speed, low leakage current InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors [J] . Kim Y.M., Urteaga M., Rodwell M.J.W., Electronics Letters . 2002,第21期

机译：高速，低泄漏电流InP / In / sub 0.53 / Ga / sub 0.47 / As / InP变形双异质结双极晶体管
3. Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction [J] . Jin-Hi Shin, Joonwoo Lee IEEE Electron Device Letters . 1997,第2期

机译：具有突然电子发射极-基极结的AlGaAs / GaAs异质结双极晶体管的低1 / f噪声特性
4. Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor [C] . Lefebvre, E., Zaknoune, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th . 2002

机译：重掺杂InP / In / sub 0.53 / Ga / sub 0.47 / As异质结双极晶体管的突然发射极-基极结的优化
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET [O] . Mohd F. Mohd Razip Wee, Arash Dehzangi, Sylvain Bollaert, -1

机译：栅极长度变化对栅极优先自对准In0.53Ga0.47As MOSFET性能的影响
7. Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors ud [O] . Yee M., Ng W.K., David J.P.R., 2003

机译：In0.53Ga0.47as二极管和异质结双极晶体管的击穿和雪崩倍增的温度依赖性
8. Theoretical Formalism to Understand the Role of Strain in the Tailoring of Hole Masses in p-type In(x) Ga(1-x)As (on GaAs Substrates) and In (0.53+x) Ga(0.47-x) As (on InP Substrates) Modulation-Doped Field Effect Transistors [R] . Jaffe, M., Sekiguchi, Y., Singh, J. 1987

机译：理解应变在p型In（x）Ga（1-x）as（Gaas衬底）和In（0.53 + x）Ga（0.47-x）as（on on）上的孔隙尺寸裁剪中的作用的理论形式Inp substrates）调制掺杂场效应晶体管

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