Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors ud

摘要

The avalanche multiplication and impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In/sub 0.53/Ga/sub 0.47/As HBTs and could explain previous anomalous interpretations from the latter.