Field effect transistor improvable junction abruptness and method for manufacturing the same

摘要

While preventing the short channel effect, discloses a field effect transistor and a method of manufacturing the same capable of improving the on-current of the transistor. Field effect transistor of the present invention is disclosed, the device isolation film for defining an active region is formed as a gate electrode is formed on a predetermined portion of the semiconductor substrate. And a channel layer is located at the bottom of the gate electrode, a gate oxide film between the gate electrode and the channel layer is sandwiched. Both sides of such a channel layer is formed on the source and drain regions. In this case, the boundary is the source and drain regions and the channel forming layer constitutes a substantially vertical with respect to the semiconductor substrate surface.