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Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

机译：场效应晶体管与双极结晶体管与电化学传感器中的换能器的比较

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Sufi Zafar; Minhua Lu; Ashish Jagtiani;
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1. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors [J] . Sufi Zafar, Minhua Lu, Ashish Jagtiani Scientific reports. . 2017,第1期

机译：场效应晶体管与双极结晶体管与电化学传感器中的换能器的比较
2. Hydroquinone monosulfonate-doped polypyrrole electrodeposited on very low cost commercial junction field effect transistors as a novel ion sensitive field effect transistor pH sensor [J] . Morteza Akhond, Amin Farhangfar Journal of the Iranian Chemical Society . 2014,第4期

机译：电沉积在非常低成本的商用结型场效应晶体管上的氢醌单磺酸盐掺杂的聚吡咯，作为新型离子敏感型场效应晶体管pH传感器
3. Development of high-performance fully depleted silicon-on-insulator based extended-gate field-effect transistor using the parasitic bipolar junction transistor effect [J] . Jin-Kwon Park, Won-Ju Cho Applied Physics Letters . 2012,第13期

机译：利用寄生双极结晶体管效应开发基于高性能全耗尽型绝缘体上硅的扩展栅场效应晶体管
4. Comparison of gm-boosted oscillators in silicon field effect transistor and silicon-germanium hetero-junction bipolar transistor technology [C] . Ussmueller Thomas, Seemann Kay, Weigel Robert Microwave Integrated Circuits conference, 2009. EuMIC 2009 . 2009

机译：硅场效应晶体管和硅锗异质结双极晶体管技术中的g m 增强型振荡器的比较
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors [O] . Sufi Zafar, Minhua Lu, Ashish Jagtiani -1

机译：电化学传感器中场效应晶体管和双极结晶体管作为传感器的比较
7. High-Sensitivity MEMS Pressure Sensor Utilizing Bipolar Junction Transistor with Temperature Compensation [O] . Mikhail Basov 2021

机译：利用具有温度补偿的双极连接晶体管的高灵敏度MEMS压力传感器
8. Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design. [R] . Kennedy, E. J., Alley, G. T., Britton, C. L., 1990

机译：与ssC电路设计相关的辐射对结型场效应晶体管（JFETs），mOsFET和双极晶体管的影响。

Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

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