JUNCTION FIELD EFFECT TRANSISTOR MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, IMAGING DEVICE MANUFACTURING METHOD, JUNCTION FIELD EFFECT TRANSISTOR AND IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a junction field effect transistor manufacturing method which inhibits characteristic fluctuation due to positional deviation of a mask while achieving refinement of an element.;SOLUTION: A manufacturing method of a junction field effect transistor in which a channel ration is arranged at a deeper position in a semiconductor substrate than one region of a source region and a drain region comprises: a first process of forming on a semiconductor substrate 100 where a first conductivity type first semiconductor region 111 is arranged, a first mask having a first opening 106 which is arranged to be included in the first semiconductor region 111 in plan view; a second process of performing implantation of an ion of a second conductivity type opposite to the first conductivity type on a partial region of the first semiconductor region 111 by using the first mask to form a second conductivity type second semiconductor region 113 which forms at least a part of the channel region; and a third process of performing implantation of the second conductivity type ion by using the first mask to form a second conductivity type third semiconductor region 114 which forms the one region.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2016,JPO&INPIT