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MODIFIED APERTURE IN EXPOSURE EQUIPMENT FOR SEMICONDUCTOR DEVICE FABRICATION

机译:半导体设备制造中曝光设备的修正孔径

摘要

The present invention relates to a semiconductor manufacturing technology, particularly to an illumination system of a semiconductor device will preparative exposure tool, is more related to the hit variant upper exposure equipment for producing a semiconductor device (aperture). The present invention, there is provided an aperture variation of an exposure device for manufacturing a semiconductor device which can implement the pattern pitch equal to or less than the resolution limit of an exposure light source. According to an aspect of the invention, X-axis and the first and second openings of symmetrically disposed flat arc shape of the positive direction ("()" shape), the anode of the Y-axis direction that is symmetrically disposed and a third and a fourth aperture of the arc shape of the sector ("()" shape), the first and the opening angle of 35~45 , and the second opening, the opening angle of the third and fourth openings hit the upper deformation of the semiconductor device is provided for making an exposure device, characterized in that the 5~25 .
机译:本发明涉及一种半导体制造技术,特别是涉及一种将用于半导体器件的照明系统的制备曝光工具,更涉及一种用于生产半导体器件(光圈)的命中型上曝光设备。本发明提供了一种用于制造半导体器件的曝光装置的孔径变化,其可以实现图案间距等于或小于曝光光源的分辨率极限。根据本发明的一个方面,X轴和正向对称设置的圆弧形状的第一和第二开口(“(”)形),Y轴方向对称设置的阳极和第三方向扇形的圆弧形状的第四孔(“(”)形状),第一和第三开口角度为35〜45,第二开口,第三和第四开口的开口角度达到提供一种用于制造曝光装置的半导体装置,其特征在于5〜25。

著录项

  • 公开/公告号KR20060000925A

    专利类型

  • 公开/公告日2006-01-06

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20040049917

  • 发明设计人 PARK CHAN HA;

    申请日2004-06-30

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 21:27:02

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