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TFT SUBSTRATE AND MAKING METHOD OF THE SAME

机译:TFT基板及其制造方法

摘要

This invention relates to a thin film transistor substrate and a method of manufacturing the same. A thin film transistor substrate of the present invention the gate is formed in a substrate material according to the line, the gate line and the data line, which includes a cross-formed, the gate line and the gate array and the array of pads that are connected by a line in the display region , in the non-display area and the data line and the pad array portion data shorting bar connected via the shorting bar and the protective film covering the said array line, and removing the protective sphere and a pair of contact exposed to the array line, the pair of connecting the array lines exposed through the contact hole to each other and the bridge is made of a transparent electrode layer, is positioned between the line and the array shows tingba, block the electrical connection between the array and the cut line and the tingba show patterns in which the protective film is removed, It characterized in that it comprises a connector that is formed. In the manufacturing process a thin film transistor substrate which is a problem that static electricity flows to the gate driving circuit formed on the substrate to improve the thin-film transistor substrate that may occur is provided by.
机译:薄膜晶体管基板及其制造方法技术领域本发明涉及薄膜晶体管基板及其制造方法。根据本发明的薄膜晶体管基板的栅极根据所述线,栅极线和数据线在基板材料中形成,其包括交叉形成的,栅极线和栅极阵列以及焊盘阵列,在显示区域中,在非显示区域中通过线连接数据线和经由短路棒和覆盖所述阵列线的保护膜连接的焊盘阵列部分数据短路棒,并去除保护球和一对触点暴露于阵列线,一对通过接触孔暴露的阵列线相互连接,桥由透明电极层制成,位于阵列线与阵列之间,呈汀巴状,阻断电连接阵列和切割线之间的边界线和边栏显示了去除保护膜的图案。其特征在于,它包括形成的连接器。在制造过程中,提供了一种薄膜晶体管基板,该问题是静电流到形成在基板上的栅极驱动电路以改善可能发生的薄膜晶体管基板的问题。

著录项

  • 公开/公告号KR20060058507A

    专利类型

  • 公开/公告日2006-05-30

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20040097576

  • 发明设计人 AHN BYEONG JAE;KIM BEOM JUN;

    申请日2004-11-25

  • 分类号G02F1/136;

  • 国家 KR

  • 入库时间 2022-08-21 21:25:38

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