TFT TFT TFT TFT substrate including barrier layer including silicon oxide layer and silicon silicon nitride layer Organic light-emitting device comprising the TFT substrate and the manufacturing method of the TFT substrate

摘要

According to an aspect of the present invention, there is provided a semiconductor device comprising: a flexible substrate; A first barrier layer formed in direct contact with the plastic substrate, the first barrier layer comprising a first silicon oxide layer and a first silicon nitride layer; A second barrier layer formed on the first barrier layer, the second barrier layer comprising a second silicon oxide layer and a second silicon nitride layer; A silicon oxynitride layer positioned between the first barrier layer and the second barrier layer; And a thin film transistor (TFT) layer formed on the second barrier layer, wherein the second silicon oxide layer is disposed closer to the TFT layer than the second silicon nitride layer, and the first barrier layer and the second barrier layer The entire thickness of the silicon nitride layer included in the second barrier layer is thinner than the total thickness of the silicon oxide layer included in the first barrier layer and the second barrier layer.