Doped semiconductor oxide fine powders and process for their preparation

摘要

The invention relates to areas in semiconductor technology and doped semi-conductor fine powder which, for example, can be used as coatings on television screens. The aim of the invention is to provide doped semi-conductor oxide fine powder which displays improved electrical conductivity and also improved optical transparency. The aim of the invention is achieved due to said doped semi-conductor fine powder wherein the powder grains have a production-relates segregation layer and which has an increased portion of doping elements arranged on the surface thereof and displays an even distribution of the doping elements over the total additional grain cross-section. The aim is also achieved by means of a method wherein a doped semi-conductor oxide fine powder is tempered, the powder grains having a high monomolecular layer are coated by the already used doped element(s) after cooling and then additional temperature treatment is carried out at temperatures of between 400 -1000 DEG C and at times from 10 minutes to 6 hours.