Technique for generating mechanical tension in different channel regions by forming an etch stop layer, which has a differently modified internal voltage.

摘要

By providing a contact an etching stop layer, the mechanical stress in channel regions of different comprised of be controlled in an efficient manner, whereby tensile stress areas and pressure voltage areas of the contact an etching stop layer by well established processes, for example a wet chemical etching, plasma etching, ion implantation and plasma treatment, can be obtained. Thus, a significant improvement of the transistor behavior, can be achieved without that significantly to the process complexity is helped.