Techniques for generating different mechanical stresses by forming etch stop layers with different intrinsic stresses in different channel regions

摘要

It is possible to control the stress inside the channel territory of transistor type (100N) and (100P) which differ by providing contact etching stop layer (116), effectively. At that time, to be able with the process where wet chemical etching, plasma etching, ion implantation and plasma processing etc are established sufficiently it is possible the tensile stress part and the compressed stress part of contact etching stop layer (116). Because of this, it can improve the efficiency of transistor (100N) and (100P) largely without making process considerable to complicated.