TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRESS IN DIFFERENT CHANNEL REGIONS BY FORMING AN ETCH STOP LAYER HAVING DIFFERENTLY MODIFIED INTRINSIC STRESS

摘要

By providing a contact etch stop layer 116 , the channel of the transistor differential forms (100N, 100P) the stress in the areas can be effectively controlled , in which tensile or compressive stress of the contact portion stops the layers may be obtained chemically etching, plasma etching , ion implantation , by the well established processes such as plasma processing . So transistor (100N, 100P) a significant improvement in performance is obtained, the processor complexity , on the other hand, does not contribute significantly .