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机译:Si_(1-x)Ge_x沟道和应力接触蚀刻停止层对纳米级n型金属氧化物半导体场效应晶体管的力学性能影响
Department of Mechanical Engineering, Research and Development Center for Microsystem Reliability, Chung Yuan Christian University, Chungli, Taiwan, ROC,Institute of Biomedical Technology (IBT), Chung Yuan Christian University, Chungli, Taiwan, ROC;
Department of Aerospace and Systems Engineering, Feng Chia University, Taichung, Taiwan, ROC;
Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei, Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, Taipei, Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, Taipei, Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, Taipei, Taiwan, ROC;
SiGe channel; CESL; Finite element analysis (FEA);
机译:接触蚀刻停止层和Si_(1-x)Ge_x沟道机械性能对带有伪门阵列的纳米级短沟道NMOSFET的影响
机译:器件兼容的砷化镓在具有薄(〜80 nm)Si_(1-x)Ge_x台阶缓变缓冲层的硅衬底上的分子束外延生长,用于高κⅢ-Ⅴ型金属氧化物半导体场效应晶体管的应用
机译:非对称Si / Si_(1-x)Ge_x沟道垂直p型金属氧化物半导体场效应晶体管
机译:通过光谱椭圆形测定法选择性地生长外延Si_(1-X)Ge_x和Si / Si_(1-x)Ge_x层的在线和非破坏性分析。与其他建立技术的比较
机译:P型和N型低聚噻吩基半导体作为有机场效应晶体管中的有源层。
机译:具有常关特性的反相沟道金刚石金属氧化物半导体场效应晶体管
机译:完全拉伸的应变部分硅绝缘体n型 采用局域化的横向双扩散金属氧化物半导体场效应晶体管 接触蚀刻停止层