机译:不同沟道长度的带有接触蚀刻停止层应力源的n型金属氧化物半导体场效应晶体管的现象
Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;
Department of Electronic Engineering, Ming-Oman University, 5 De Ming Rd., Gui Shan, Taoyuan 333 Taiwan, ROC;
Department of Mechanical Engineering, Chung Yuan Christian University, 200, Chung Pei Rd., Chung Li, Taoyuan 320 Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, 162, Sec. 1, Heping E Rd., Taipei 106 Taiwan, ROC;
Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;
Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;
Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, 162, Sec. 1, Heping E Rd., Taipei 106 Taiwan, ROC;
Department of Mechatronic Technology, National Taiwan Normal University, 162, Sec. 1, Heping E Rd., Taipei 106 Taiwan, ROC;
Strained-Si technology; Contact etch stop layer (CESL); SiGe channel; Stress simulation;
机译:Si_(1-x)Ge_x沟道和应力接触蚀刻停止层对纳米级n型金属氧化物半导体场效应晶体管的力学性能影响
机译:接触蚀刻停止层厚度和栅极高度对应变N型金属氧化物半导体场效应晶体管中沟道应力的影响
机译:拉伸接触蚀刻停止层对嵌入硅-碳合金应力源的纳米级应变NMOSFET的应力影响
机译:高压氢退火工艺对HfO
机译:在中波长红外线(MWIR)P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格(T2SL)用于红外检测
机译:通过原子层沉积对聚碳酸酯蚀刻离子通道的直径小于100 nm的通道进行共形SiO2涂层
机译:使用薄原子层沉积层将铝触点费米能级钉扎到n型锗
机译:与n型Gasb和n型GaInassb的欧姆接触