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Atomic layer accumulation of hafnium based high permittivity dielectric
Atomic layer accumulation of hafnium based high permittivity dielectric
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机译:based基高介电常数电介质的原子层积累
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摘要
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
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