6 transistor FINFET type CMOS static RAM cell which possesses the cell ratio which is increased

摘要

The CMOS static RAM cell which relates to this invention is two access devices, two access devices of the place where it consists of 3 gate transistors where each access device has the single fin; They are two pull-up devices, two pull-up devices of the place where it consists of 3 gate transistors where each pull-up device has the single fin; And they are two pull-down devices, it possesses two pull-down devices of the place where it consists of 3 gate transistors where each pull-down device has the plural fins. Furthermore, production method of the CMOS static RAM cell which has 3 gate transistors which possess two fins is offered.