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Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof
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机译:具有高k栅极电介质和减少的掩模工艺的Trench MOS肖特基势垒整流器
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摘要
A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa during reverse bias. A reduced mask process is used in which a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment causes the Ti to diffuse into the SiO2 gate oxide to form the TiO2 gate and to form the TiSi Schottky barrier on the top surface of the mesa.
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