Atomic layer deposition (ald) method for producing a high quality layer

摘要

The present invention is related to an ALD method comprising the steps of:a) providing a semiconductor substrate in a reactor,b) providing a pulse of a first precursor gas into the reactor at a first temperature,c) providing a first pulse of a second precursor gas into the reactor at a second temperature,d) providing a second pulse of the second precursor gas at a third temperature lower than the second temperature, ande) optionally repeating at least once step b) through step d) till a desired layer thickness is achieved.;It is also related to a reactor suitable to apply the method.