A method for forming an MIM(Metal Insulator Metal) capacitor in a semiconductor device is provided to remove stably re-sputtered metallic grains due to an etching process for a lower electrode for a capacitor by using a polymer layer capable of making the metallic grains deposited on the polymer layer itself. A metal line and a lower electrode(131) for a capacitor are formed on a semiconductor substrate. An insulating layer and a metal film are sequentially formed on the lower electrode. A photoresist pattern(150) is formed on the resultant structure. A upper electrode(133) for a capacitor is formed on the resultant structure by etching selectively the metal film using the photoresist pattern as an etch mask. A polymer layer(151) is formed at a sidewall of the upper electrode. A capacitor insulating layer(132) is formed by etching the insulating layer using the photoresist pattern as an etch mask. Then, the polymer layer is removed from the upper electrode by a cleaning process.
展开▼
