Reliability characterization of high density Metal-Insulator-Metal Capacitors (MIMCAP) fabricated by depositing Silicon Nitride using PECVD in Compound Semiconductor Manufacturing

摘要

To shrink the size of a die, we have developed high density MIMCAP process for our next generation RFIC products. Using an optimized PECVD process for silicon nitride deposition, we have determined the median time to failure (MTTF) of MIM capacitors using two different electrical tests, Ramp Voltage and Time Dependent Dielectric Breakdown (TDDB). Both of these tests were relatively quick. The TDDB tests required small number of samples. We have compared these lifetimes of MIM capacitors from two different methods at lower operating voltages.