Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

摘要

This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH(sub 4) in helium. Rates of up to ten times (5.5 micrometer/h) that of the standard technique are obtained, allowing for the feasible fabrication of detectors having thickness up to 100 micrometers. The electrical characteristics (depletion voltage, residual space charge density) of the helium diluted material, have been investigated and compared to that of the standard material. The response of detectors, made from both materials, to 5.5 MeV alpha particles are compared. 6 figs., 5 tabs., 13 refs. (Atomindex citation 27:011233)