HIGHLY INTEGRATED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A highly integrated semiconductor device and its manufacturing method are provided to reduce the electric resistance between source regions and a global source line and to improve the operation speed by using a global source plug structure capable of connecting directly local source lines made of metal to the global source line. A plurality of semiconductor layers are sequentially stacked with each other under a plurality of bit lines(400). A plurality of transistor structures are arranged on the semiconductor layers, respectively. Each transistor structure composed of a gate line(160,260,360), and source and drain regions(170s,270s,170d,270d,370d) at both sides of the gate line in the semiconductor layer. Local source line structures are arranged on the semiconductor layers to connect vertically source regions to the bit lines. Drain plug structures are used for connecting drain regions to the bit lines. The bit lines and the local source line structures contain at least one metallic material. The local source line structures are connected to a global source line through one global source plug structure.