FERROELECTRIC MEMORY, SEMICONDUCTOR DEVICE, PRODUCTION METHOD FOR FERROELECTRIC MEMORY, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

Method of manufacturing a ferroelectric memory of the present invention is formed at least in a state that the ferroelectric capacitor 105 on the substrate 10, the laser beam 70, a pulse-like from the top of the ferroelectric capacitor 105. ; A ferroelectric memory, the ferroelectric capacitor, the laser light, a semiconductor device, the substrate, the memory cell area, the circuit area