FABRICATION METHOD OF NANO-FLOATING GATE FLASH MEMORY DEVICES UTILIZING METAL NANOCRYSTALS

摘要

A method of fabricating a flash memory device having a nano floating gate is provided to form metal nano crystalline in an SiO2 thin film, thereby fabricating the device having superior device reproducibility. A metal oxide is deposited on a silicon substrate to have a thickness of 10 to 100nm, and then the silicon substrate with the metal oxide is annealed at a temperature of 600 to 900deg.C. The annealed silicon substrate is irradiated with an electron beam to form metal nano crystalline. The metal oxide is at least one selected from the group consisting of ZnO, Cu2O, SnO2, TiO2, Al2O3, GaxO3, In2O3, CrO2 and Fe2O3.