We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.
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机译：我们用嵌入在电介质中的TISI2和WSI2纳米晶体制造了纳米浮栅存储器。通过使用溅射和快速热退火系统产生TISI2和WSI2纳米晶体，然后通过透射电子显微镜检查它们的形态。这些纳米晶体具有平均直径为2-5nm的球形。通过电容 - 电压（C-V）滞后曲线，记忆速度和保留，具有TISI2和WSI2纳米晶体的纳米浮栅存储器的电特性。获得的TISI2和WSI2纳米晶体电容器的平带电压分别出现高达4.23V和4.37V。在1小时后，将其平带电压移位保持高达1.6 V和1 V.
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