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Semiconductor component, e.g. power metal oxide semiconductor field effect transistor (MOSFET) includes insulator layer formed by laminating oxide layer and oxynitride layer
Semiconductor component, e.g. power metal oxide semiconductor field effect transistor (MOSFET) includes insulator layer formed by laminating oxide layer and oxynitride layer
At least one gate is formed on the semiconductor body through an insulator layer. The insulator layer is comprised of an oxide layer and a oxynitride layer that are laminated together. An independent claim is also included for a semiconductor component manufacturing method.
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