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Semiconductor circuit including electrostatic discharge circuit having protection element and trigger transistor

机译:包括具有保护元件和触发晶体管的静电放电电路的半导体电路

摘要

A semiconductor circuit includes, a first pad for a first power source, a second pad for a second power source, a third pad for an input/output signal, a protection element arranged between the third pad and the second pad; and a transistor functioning as a trigger element for use in flowing a trigger current to the protection element. The transistor includes a gate and a backgate being connected to the first pad and is connected to the protection element such that a source potential of the transistor becomes lower than a potential of the third pad, based on a voltage drop caused by the protection element, when potentials of the first pad and the third pad are kept at a power supply voltage level.
机译:半导体电路包括:用于第一电源的第一焊盘,用于第二电源的第二焊盘,用于输入/输出信号的第三焊盘,布置在第三焊盘和第二焊盘之间的保护元件;用作触发元件的晶体管,用于使触发电流流向保护元件。晶体管包括连接至第一焊盘的栅极和背栅,并连接至保护元件,从而基于由保护元件引起的电压降,晶体管的源极电势变得低于第三焊盘的电势,当第一焊盘和第三焊盘的电位保持在电源电压电平时。

著录项

  • 公开/公告号US2008217650A1

    专利类型

  • 公开/公告日2008-09-11

    原文格式PDF

  • 申请/专利权人 YASUYUKI MORISHITA;

    申请/专利号US20080071766

  • 发明设计人 YASUYUKI MORISHITA;

    申请日2008-02-26

  • 分类号H01L29/73;

  • 国家 US

  • 入库时间 2022-08-21 20:16:44

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