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NMOS device, PMOS device, and SiGe HBT device formed on soi substrate and method of fabricating the same
NMOS device, PMOS device, and SiGe HBT device formed on soi substrate and method of fabricating the same
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机译:在硅衬底上形成的NMOS器件,PMOS器件和SiGe HBT器件及其制造方法
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摘要
Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
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