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Concurrent programming and program verification of floating gate transistor

机译:浮栅晶体管的并发编程和编程验证

摘要

A program voltage is applied to the drain electrode of a floating gate transistor to program the floating gate transistor. Concurrent with the application of the program voltage, a current based on the voltage at the source electrode of the floating gate transistor is compared with a threshold current to verify the programming of the floating gate transistor. When the bit cell current falls below the threshold current, the floating gate transistor is considered to be sufficiently programmed and the next floating gate transistor to be programmed is selected. Further, the program voltage supply emulates the selection circuitry used to select between the bit cells so as to model the voltage drop caused by the selection circuitry between the program voltage supply and the drain electrode of the floating gate transistor being programmed. The program voltage supply adjusts the output program voltage based on the modeled voltage drop.
机译:编程电压被施加到浮栅晶体管的漏电极以对浮栅晶体管进行编程。在施加编程电压的同时,将基于浮栅晶体管的源电极处的电压的电流与阈值电流进行比较,以验证浮栅晶体管的编程。当位单元电流降至阈值电流以下时,则认为浮栅晶体管已被充分编程,并选择了下一个要编程的浮栅晶体管。此外,编程电压源仿真用于在位单元之间进行选择的选择电路,以便建模由编程电路电源和被编程的浮栅晶体管的漏极之间的选择电路引起的电压降。程序电压源根据建模的电压降调整输出程序电压。

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