首页>
外国专利>
High-voltage field-effect transistor and method for manufacturing a high-voltage field-effect transistor
High-voltage field-effect transistor and method for manufacturing a high-voltage field-effect transistor
展开▼
机译:高压场效应晶体管和制造高压场效应晶体管的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
High-voltage field-effect transistor is provided that includes a drain terminal, a source terminal, a body terminal, and a gate terminal. A gate oxide and a gate electrode, adjacent to the gate oxide, is connected to the gate terminal. A drain semiconductor region of a first conductivity type is connected to the drain terminal. A source semiconductor region of a first conductivity type is connected to the source terminal. A body terminal semiconductor region of a second conductivity type is connected to the body terminal. A body semiconductor region of the second conductivity type, is partially adjacent to the gate oxide to form a channel and is adjacent to the body terminal semiconductor region. A drift semiconductor region of the first conductivity type is adjacent to the drain semiconductor region and the body semiconductor region, wherein in the drift semiconductor region, a potential barrier is formed in a region distanced from the body semiconductor region.
展开▼