High-voltage field-effect transistor and method of making a high-voltage field-effect transistor

摘要

A high-voltage FET comprises drain (D), source (S), body (B) and gate (G) connections, gate oxide (89), gate electrode (25), drain (11) and source (12) regions and oppositely doped semiconductor body regions (30,31) forming a channel at the gate oxide. A doped drift semiconductor region (10) borders the drain and body regions and forms a potential barrier (pb) in a region (50) spaced from the body region (30). An independent claim is also included for a production process for the above.