FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE

摘要

Provided is a field-effect transistor wherein an oxide film is arranged as a semiconductor layer, the oxide film has a channel portion, a source portion and a drain portion, and compositions of the channel portion, the source portion and the drain portion, excluding oxygen element and an inert gas, are substantially the same.