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Nonvolatile semiconductor memory device, such as an EEPROM or a flash memory, with reference cells
Nonvolatile semiconductor memory device, such as an EEPROM or a flash memory, with reference cells
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机译:具有参考单元的非易失性半导体存储设备,例如EEPROM或闪存
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摘要
To set a threshold of a reference cell in short time in a semiconductor memory device using a variable threshold type nonvolatile memory cell as a reference current/voltage generating unit, a memory cell which keeps an initial state during an inspection process without performing write/erase operations is provided in an area of a memory cell storing data, and Vt setting of a reference cell is performed while the verification of the reference cell is performed on the basis of the memory cell which keeps the initial state during the inspection process.
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