Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution

摘要

A plasma reactor is provided having multiple frequency control of etch parameters. The reactor includes a reactor chamber 10 and a workpiece support 16 within the chamber, the chamber having a ceiling 14 facing the workpiece support, and an inductively coupled source power applicator and a capacitively coupled plasma source power applicator. An array of optical fibers 330 extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors 328 are coupled to the output ends of the optical fibers. The reactor further includes a controller 60 responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.