SONOS MEMORY DEVICE WITH REDUCED SHORT-CHANNEL EFFECTS

摘要

A non- volatile memory device on a semiconductor substrate having a semiconductor surface layer (2) comprises a source region (12,S), a drain region (12,D), a channel region (CO), a memory element (ME), and a gate (G). The channel region (CO) extends in a first direction (X) between the source region (12,S) and the drain region (12,D). The gate (G) is disposed near the channel region (CO) and the memory element (ME) is disposed in between the channel region (CO) and the gate. The channel region is disposed within a beam-shaped semiconductor layer (4), with the beam-shaped semiconductor layer (4a, 4b, 4c, 4d) extending in the first direction (X) between the source (12,S) and drain (12,D) regions and having lateral surfaces (4a, 4b, 4c, 4d) extending parallel to the first direction (X). The memory element comprises a charge-trapping stack (8) which covers of the lateral surfaces at least the lower surface (4c) directed towards the semiconductor surface layer (2) and the side surfaces (4b, 4d) which are directly connecting to the lower surface (4c) so as to embed the beam-shaped semiconductor layer (4) in a U-shaped form of the charge trapping stack (8).