Method for manufacturing of semiconductor device, involves implanting doping substances in semiconductor substrate, where substrate has two areas, and implanted doping substrate is activated in substrate

摘要

The method involves implanting doping substances in a semiconductor substrate. The substrate has two areas. The implanted doping substrate is activated in the substrate, in which the two areas are exposed with different activating energies. The substrate is provided with the implanted doping substrate on a process surface of a heating device, in order to execute the activating step.