Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate

• 1. 第3－5族氮化物半导体多层衬底，用于制备第3－5族氮化物半导体自立衬底的方法和半导体元件 [P] . 中国专利： CN101180710A . 2008-05-14
• 2. 第Ⅲ族氮化物半导体生长基板、第Ⅲ族氮化物半导体外延基板、第Ⅲ族氮化物半导体元件、第Ⅲ族氮化物半导体自立基板及它们的制造方法 [P] . 中国专利： CN102326228B . 2014.03.05
• 3. GROUP 3-5 NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING GROUP 3-5 NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND SEMICONDUCTOR ELEMENT [P] . 韩国专利： KR20080003913A . 2008-01-08

  机译： 3-5组氮化物半导体多层基质，制造3-5组氮化物自支撑基质的方法和半导体元件

• 4. GROUP 3-5 NITRIDE SEMICONDUCTOR MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING GROUP 3-5 NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND SEMICONDUCTOR ELEMENT [P] . 世界知识产权组织专利： WO2006123540A1 . 2006-11-23

  机译： 3-5组氮化物半导体多层基质，制造3-5组氮化物自支撑基质的方法和半导体元件

• 5. Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate [P] . 英国专利： GB2440484A . 2008-01-30

  机译： 3-5族氮化物半导体多层基板，3-5族氮化物半导体自立基板的制造方法

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• 1. Design and Analysis of MEMS Based Aluminum Nitride (AlN), Lithium Niobate (LiNbOsub3/sub) and Zinc Oxide (ZnO) Cantilever with Different Substrate Materials for Piezoelectric Vibration Energy Harvesters Using COMSOL Multiphysics Software [J] . Ahmad M. Alsaad ,Ahmad A. Ahmad ,Qais M. Al-Bataineh . 应用科学（英文） . 2019,第4期
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• 3. Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus [J] . Yuichi Sato ,Shota Ishizaki ,Yoshifumi Murakami . 现代物理（英文） . 2015,第9期
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