Growth of nitride semiconductors on SiC substrates by RF-MBE

摘要

We have successfully grown GaGdN and AlGdN alloy semiconductors by RF-MBE for the first time. Those are epitaxially grown on (0001) 6H-SiC substrates. The strained lattice constants for the a-axis and the c-axis of wurtzite structure of GdN are estimated to be 0.348nm and 0.549nm, respectively. The band-edge emission wavelength of Ga{sub}0.94Gd{sub}0.06N measured by room temperature cathodolumihescence (CL) is 370nm, which is slightly longer than that of GaN (363nm). A Gd{sup}(3+) related emission is also observed at 645nm in the CL spectra. In the CL spectra of AlGdN, a strong and sharp emission located at 317nm is observed.