NON-UNIFORM MINORITY CARRIER LIFETIME DISTRIBUTION IN HIGH PERFORMANCE SILICON POWER DEVICE

摘要

PPROBLEM TO BE SOLVED: To provide a segment having a required profile of minority carrier recombination centers, and a method of manufacturing such segment, by heat-treating a single crystal silicon segment. PSOLUTION: The segment has a front surface, a back surface, and a central plane between the front and back surfaces. This method makes the segment subject to a heat treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled from the temperature of the heat-treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to manufacture a segment having a vacancy concentration profile in which the peak density is at or near the central plane, and the concentration generally decreases in the direction of the front surface of the segment. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies. PCOPYRIGHT: (C)2010,JPO&INPIT