Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique

摘要

An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.