首页> 外国专利> METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELECTRONIC COMPONENT, AND SEMICONDUCTOR ELECTRONIC COMPONENT

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELECTRONIC COMPONENT, AND SEMICONDUCTOR ELECTRONIC COMPONENT

机译:制造半导体器件和半导体电子部件的方法以及半导体电子部件

摘要

PROBLEM TO BE SOLVED: To enable an adsorption jig for use in a semiconductor device manufacturing technology to be heat-resistant at 300°C or more.;SOLUTION: The adsorption jig such as a collet 60 and the like mounted on a collet holder 61 is provided with high heat resistance. Adoption of such structure as above allows the collet 60 which has so far caused heat deterioration at temperature applied in gold/tin eutectic bonding and the like to be used without causing the heat deterioration and the like. A predetermined high heat resistance silicon resin is preferably used for the high heat resistance. Such a commercial product as FX-T154 can be enumerated as an example. The high heat resistance silicon resin whose Shore A hardness is 10 to 90 is preferably used. Further, proper conductivity may be applied to the high heat resistance silicon resin by adding conductive agent thereto.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:为了使用于半导体器件制造技术中的吸附夹具在300℃或更高温度下耐热;解决方案:诸如夹具60之类的吸附夹具安装在夹具夹持器61上。具有高耐热性。通过采用这样的结构,可以使用迄今在金/锡共晶接合等中施加的温度下引起热劣化的筒夹60而不会引起热劣化等。预定的高耐热性硅树脂优选用于高耐热性。例如FX-T154这样的商业产品可以被列举。优选使用肖氏A硬度为10〜90的高耐热性硅树脂。此外,可以通过向导电性高的硅树脂中添加导电剂来赋予适当的导电性。版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP2009194234A

    专利类型

  • 公开/公告日2009-08-27

    原文格式PDF

  • 申请/专利权人 RENESAS TECHNOLOGY CORP;

    申请/专利号JP20080035006

  • 发明设计人 ISHIGURO TAKANORI;

    申请日2008-02-15

  • 分类号H01L21/60;H01L21/677;

  • 国家 JP

  • 入库时间 2022-08-21 19:45:31

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