The method for relaxation of forced thin layer constraint dependent by a first principal face of an initial support and second principal face of a thin layer as a contact face, comprises supplying an intermediate support having a relaxing polymer layer (2), a principal face on substrate (1, 4) and a contact face, setting in adherent contact of the contact face of the thin layer forced with the contact face by the polymer layer, and eliminating the initial support that causes the relieving of the thin layer formation of undulations and the first principal face of the thin layer. The method for relaxation of forced thin layer constraint dependent by a first principal face of an initial support and second principal face of a thin layer as a contact face, comprises supplying an intermediate support having a relaxing polymer layer (2), a principal face on substrate (1, 4) and a contact face, setting in adherent contact of the contact face of the thin layer forced with the contact face by the polymer layer, eliminating the initial support that causes the relieving of the thin layer formation of undulations and the first principal face of the thin layer, increasing temperature of the polymer layer to stretch the released thin layer and remove the undulations, solidarizing the first principal face of the thin layer with a substrate face reception, and eliminating the intermediate support to obtain a thin layer and the substrate. The thermal dilation coefficient of polymer is higher than the thin layer. The intermediate support is supplied by depositing of a liquid state polymeric layer on the substrate for polymerization. The liquid state polymer is deposited on the substrate face having a position hold (3) for the polymer layer. The position holds are made of polymer same as the layer of polymer. The liquid state polymer deposited on the substrate is planarized by setting in contact with the liquid state polymer of planarization substrate. The planarization substrate has a resin film (5). The planarization substrate is eliminated after the polymerization. The elimination of the planarization substrate is carried out by separation of blade inserted between the polymer layer and the planarization substrate. The contact face of the thin layer and the polymer layer are in adherent contact by polymerization interposed between the contact faces or molecular joining. The initial support and the polymer layer are eliminated chemically or mechanically. The solidarization of the first principal face of the thin layer with the substrate face reception is carried out by molecular joining. The elimination of the intermediate support is done by initially eliminating the substrate of the intermediate support and the polymer layer. The substrate of the intermediate support is eliminated by separation of a blade inserted between the intermediate support and polymer layer. The forced thin layer is a first semiconductor material layer obtained by hetero-epitaxy on the initial support of the second semiconductor material.
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